rev.2.00 sep 07, 2005 page 1 of 7 2SK3152 silicon n channel mos fet high speed power switching rej03g1077-0200 (previous: ade-208-732) rev.2.00 sep 07, 2005 features ? low on-resistance r ds =100 m ? typ. ? high speed switching ? 4 v gate drive device can be driven from 5 v source outline renesas package code: prss0003ad-a (package name: to-220fm) 1. gate 2. drain 3. source 1 2 3 d g s
2sk3140 rev.2.00 sep 07, 2005 page 2 of 7 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 120 v gate to source voltage v gss 20 v drain current i d 10 a drain peak current i d(pulse) note1 40 a body-drain diode reverse drain current i dr 10 a avalanche current i ap note3 10 a avalanche energy e ar note3 8.5 mj channel dissipation pch note2 25 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ? electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 120 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 a v ds = 120 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v i d = 1 ma, v ds = 10 v r ds(on) ? 100 130 m ? i d = 5 a, v gs = 10 v note4 static drain to source on state resistance r ds(on) ? 130 170 m ? i d = 5 a, v gs = 4 v note4 forward transfer admittance |y fs | 5.5 9.5 ? s i d = 5 a, v ds = 10 v note4 input capacitance ciss ? 580 ? pf output capacitance coss ? 240 ? pf reverse transfer capacitance crss ? 130 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 11 ? ns rise time t r ? 55 ? ns turn-off delay time t d(off) ? 140 ? ns fall time t f ? 80 ? ns i d = 5 a, v gs = 10 v, r l = 6 ? body?drain diode forward voltage v df ? 0.9 ? v i f = 10 a, v gs = 0 body?drain diode reverse recovery time t rr ? 100 ? v i f = 10 a, v gs = 0 di f / dt = 50 a/ s note: 4. pulse test
2sk3140 rev.2.00 sep 07, 2005 page 3 of 7 main characteristics power vs. temperature derating channel dissipation pch (w) case temperature t c ( c) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) drain to source voltage v ds (v) typical transfer characteristics gate to source voltage v gs (v) drain current i d (a) gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds (on) (v) drain current i d (a) static drain to source on state resistance vs. drain current static drain to source on state resistance r ds (on) (m ? ) 40 30 20 10 0 50 100 150 200 100 3 10 1 0.1 0.01 12 10 20 100 10 8 6 4 2 0 12345 0 246810 ta = 25 c tc = 75 c 25 c ?25 c operation in this area is limited by r ds(on) v ds = 10 v pulse test 100 s 1 ms pw =10 ms (1shot) dc opera tion (tc = 25 c) 10 s 20 16 12 8 4 3.5 v 3 v v gs =2.5 v gs 10 v pulse test 6 v 4 v 0.3 0.03 200 30 550 0.1 1 10 0.2 5 500 20 50 10 2 0.5 5 4 3 2 1 0 48 12 16 20 i d = 15 a 5 a 10 a 50 20 200 100 v gs = 4 v 10 v pulse test pulse test
2sk3140 rev.2.00 sep 07, 2005 page 4 of 7 case temperature t c ( c) static drain to source on state resistance vs. temperature static drain to source on state resistance r ds (on) (m ? ) forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance ? y fs ? (s) body to drain diode reverse recovery time reverse drain current i dr (a) reverse recovery time t rr (ns) typical capacitance vs. drain to source voltage drain to source voltage v ds (v) capacitance c (pf) dynamic input characteristics gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) switching characteristics switching time t (ns) drain current i d (a) 500 400 300 200 100 ?40 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 v gs = 4 v 10 v 5 a 25 c tc = ?25 c 75 c pulse test v ds = 10 v pulse test 10 a 10 a 2, 5 a 2 a 0.1 0.3 1 3 10 30 100 01020304050 2000 5000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 816243240 0 1000 500 50 100 20 10 200 500 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 di / dt = 50 a / s v gs = 0, ta = 25 c 10 20 50 v gs = 0 f = 1 mhz ciss coss crss i d = 20 a v gs v ds v dd = 100 v 50 v 25 v v dd = 100 v 50 v 25 v t f t r t d(on) t d(off) v gs = 10 v, v dd = 30 v pw = 5 s, duty < 1 %
2sk3140 rev.2.00 sep 07, 2005 page 5 of 7 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage d. u. t rg i ap monitor v ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = ? l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform 10 8 6 4 2 0 0.4 0.8 1.2 1.6 2.0 v gs = 0, ?5 v 10 v 5 v 10 8 6 4 2 25 50 75 100 125 150 0 pulse test i ap = 10 a v dd = 50 v duty < 0.1 % rg > 50 ? 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 5.0 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
2sk3140 rev.2.00 sep 07, 2005 page 6 of 7 vin monitor d.u.t. vin 10 v r l v dd = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 50 ? 90% 10% t f switching time test circuit switching time waveforms
2sk3140 rev.2.00 sep 07, 2005 page 7 of 7 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 package name prss0003ad-a to-220fm / to-220fmv mass[typ.] 1.8g sc-67 renesas code jeita package code unit: mm ordering information part name quantity shipping container 2SK3152 500 pcs box (sack) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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